Information card for entry 7027085

Structure parameters

• Formula: C9 H20 In N O S
• Calculated formula: C9 H20 In N O S
• Title of publication: The synthesis and characterisation of tris(N, N ′-diethylmonothiocarbamato)indium(III) [In(SOCNEt2)3] and diethyl(N, N ′-diethylmonothiocarbamato)indium(III) [Et2In(SOCNEt2)]n: potential precursors for the growth of indium sulfide by low pressure metal organic chemical vapour deposition
• Authors of publication: Horley, Graeme A.; Chunggaze, Mohammed; O’Brien, Paul; White, Andrew J. P.; Williams, David J.
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 1998
• Journal issue: 24
• Pages of publication: 4205
• a: 8.4768 ± 0.0005 Å
• b: 7.9916 ± 0.0011 Å
• c: 18.1539 ± 0.0013 Å
• α: 90°
• β: 95.287 ± 0.006°
• γ: 90°
• Cell volume: 1224.6 ± 0.2 ų
• Cell temperature: 203 ± 2 K
• Ambient diffraction temperature: 203 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0439
• Residual factor for significantly intense reflections: 0.0326
• Weighted residual factors for all reflections: 0.0814
• Weighted residual factors for significantly intense reflections: 0.0757
• Goodness-of-fit parameter for all reflections: 1.024
• Goodness-of-fit parameter for significantly intense reflections: 1.045
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No