Information card for entry 7027098

Structure parameters

• Chemical name: bismesitylgallium azide [Mes~2~GaN~3~]~2~
• Formula: C36 H44 Ga2 N6
• Calculated formula: C36 H44 Ga2 N6
• SMILES: [Ga]1([N]([Ga]([N]1=N#N)(c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C)=N#N)(c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C
• Title of publication: Simple synthesis of organogallium azides: structural characterization of [Mes2GaN3]2
• Authors of publication: Schulz, Stephan; Nieger, Martin
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 1998
• Journal issue: 24
• Pages of publication: 4127
• a: 10.2385 ± 0.0004 Å
• b: 13.6773 ± 0.0004 Å
• c: 14.0356 ± 0.0005 Å
• α: 69.309 ± 0.002°
• β: 74.268 ± 0.002°
• γ: 75.279 ± 0.002°
• Cell volume: 1742.26 ± 0.11 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.032
• Residual factor for significantly intense reflections: 0.0267
• Weighted residual factors for significantly intense reflections: 0.0702
• Weighted residual factors for all reflections included in the refinement: 0.0715
• Goodness-of-fit parameter for all reflections included in the refinement: 1.095
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No