Information card for entry 7031283

Structure parameters

• Formula: C34 H65 Ga2 N Si
• Calculated formula: C34 H65 Ga2 N Si
• SMILES: [Si](C(=C\C(C)(C)C)/[GaH]2C(C)(C)C)(/C(=C\C(C)(C)C)[Ga](C(C)(C)C)C(C)(C)C)(C#CC(C)(C)C)[N]12CCCC1
• Title of publication: Hydrometallation of amino-trialkynylsilanes - intramolecular M-N interactions (M = Al, Ga) and potential activation of Si-N bonds.
• Authors of publication: Uhl, Werner; Bohnemann, Jörg; Kappelt, Benedikt; Hepp, Alexander; Layh, Marcus
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2014
• Journal volume: 43
• Journal issue: 38
• Pages of publication: 14386 - 14398
• a: 11.5215 ± 0.0002 Å
• b: 20.1495 ± 0.0004 Å
• c: 32.8729 ± 0.0006 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 7631.5 ± 0.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0286
• Residual factor for significantly intense reflections: 0.0236
• Weighted residual factors for significantly intense reflections: 0.0567
• Weighted residual factors for all reflections included in the refinement: 0.0586
• Goodness-of-fit parameter for all reflections included in the refinement: 1.046
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No