Information card for entry 7033918

Structure parameters

• Formula: C58 H82 Ga2 N4 Te2
• Calculated formula: C58 H82 Ga2 N4 Te2
• SMILES: C1(=CC(C)=[N](c2c(cccc2C(C)C)C(C)C)[Ga]2(N1c1c(cccc1C(C)C)C(C)C)[Te][Ga]1([N](=C(C=C(C)N1c1c(cccc1C(C)C)C(C)C)C)c1c(cccc1C(C)C)C(C)C)[Te]2)C
• Title of publication: Te-Te and Te-C bond cleavage reactions using a monovalent gallanediyl.
• Authors of publication: Ganesamoorthy, Chelladurai; Bendt, Georg; Bläser, Dieter; Wölper, Christoph; Schulz, Stephan
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2015
• Journal volume: 44
• Journal issue: 11
• Pages of publication: 5153 - 5159
• a: 14.0688 ± 0.001 Å
• b: 13.8376 ± 0.001 Å
• c: 15.2807 ± 0.0011 Å
• α: 90°
• β: 106.759 ± 0.002°
• γ: 90°
• Cell volume: 2848.5 ± 0.4 ų
• Cell temperature: 130 ± 1 K
• Ambient diffraction temperature: 130 ± 1 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0573
• Residual factor for significantly intense reflections: 0.044
• Weighted residual factors for significantly intense reflections: 0.1175
• Weighted residual factors for all reflections included in the refinement: 0.13
• Goodness-of-fit parameter for all reflections included in the refinement: 1.081
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No