Information card for entry 7034942

Structure parameters

• Formula: C33 H43 Cl4 Ga N2 O
• Calculated formula: C33 H43 Cl4 Ga N2 O
• SMILES: [Ga]([Cl-])(Cl)(Cl)Cl.O=C1C(=CC(=C/C1=C/Nc1c(cccc1C(C)C)C(C)C)C)/C=[NH+]/c1c(cccc1C(C)C)C(C)C
• Title of publication: Gallium and indium complexes containing the bis(imino)phenoxide ligand: synthesis, structural characterization and polymerization studies.
• Authors of publication: Ghosh, Swarup; Gowda, Ravikumar R.; Jagan, Rajamony; Chakraborty, Debashis
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2015
• Journal volume: 44
• Journal issue: 22
• Pages of publication: 10410 - 10422
• a: 13.0818 ± 0.0002 Å
• b: 14.6943 ± 0.0002 Å
• c: 18.6957 ± 0.0003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3593.84 ± 0.09 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 6
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.0288
• Residual factor for significantly intense reflections: 0.0238
• Weighted residual factors for significantly intense reflections: 0.0518
• Weighted residual factors for all reflections included in the refinement: 0.0524
• Goodness-of-fit parameter for all reflections included in the refinement: 0.967
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No