Information card for entry 7038724

Structure parameters

• Formula: C51 H75 Cl6 N3 O16 Sb3 Si6
• Calculated formula: C51 H76 Cl6 N3 O16 Sb3 Si6
• SMILES: [Sb]1234([O]5[Sb]678(c9cc(cc(Cl)c9)Cl)O[Si](C(C)(C)C)(O[Si](O[Sb]95([OH]6)(O[Si](C(C)(C)C)(O[Si](C(C)(C)C)(O7)O[Si](O1)(O8)C(C)(C)C)O[Si](C(C)(C)C)(O2)O9)c1cc(Cl)cc(c1)Cl)(O3)C(C)(C)C)O4)c1cc(Cl)cc(c1)Cl.[nH+]1ccccc1.N#CC.N#CC
• Title of publication: In situ generated polysiloxanes stabilizing μ3-oxo bridged Sb3 triangles.
• Authors of publication: Santhana Raj Prabhu, M.; Ugandhar, Uppara; Baskar, Viswanathan
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2016
• Journal volume: 45
• Journal issue: 16
• Pages of publication: 6963 - 6967
• a: 12.3465 ± 0.0014 Å
• b: 13.1911 ± 0.0015 Å
• c: 23.155 ± 0.003 Å
• α: 99.92 ± 0.002°
• β: 95.997 ± 0.002°
• γ: 105.084 ± 0.002°
• Cell volume: 3542.3 ± 0.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0505
• Residual factor for significantly intense reflections: 0.0413
• Weighted residual factors for significantly intense reflections: 0.0943
• Weighted residual factors for all reflections included in the refinement: 0.0991
• Goodness-of-fit parameter for all reflections included in the refinement: 1.024
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No