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Information card for entry 7039591
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Coordinates | 7039591.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | jpd20140516 |
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Chemical name | tris[(tri-tert-butoxy)siloxy]gallium, THF adduct |
Formula | C40 H89 Ga O13 Si3 |
Calculated formula | C40 H89 Ga O13 Si3 |
SMILES | C(C)(C)(C)O[Si](O[Ga](O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)(O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)[O]1CCCC1)(OC(C)(C)C)OC(C)(C)C |
Title of publication | Ga[OSi(O(t)Bu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry. |
Authors of publication | Dombrowski, James P.; Johnson, Gregory R.; Bell, Alexis T.; Tilley, T. Don |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2016 |
Journal volume | 45 |
Journal issue | 27 |
Pages of publication | 11025 - 11034 |
a | 18.0537 ± 0.0008 Å |
b | 25.2459 ± 0.0012 Å |
c | 26.1016 ± 0.0012 Å |
α | 63.017 ± 0.002° |
β | 89.975 ± 0.002° |
γ | 89.758 ± 0.002° |
Cell volume | 10601.5 ± 0.9 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.1577 |
Residual factor for significantly intense reflections | 0.1484 |
Weighted residual factors for significantly intense reflections | 0.3505 |
Weighted residual factors for all reflections included in the refinement | 0.3544 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.2 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/7039591.html
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Users of the data should acknowledge the original authors of the
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