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Information card for entry 7041386
Preview
Coordinates | 7041386.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C47 H48 B2 F8 N3 Ni P3 |
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Calculated formula | C47 H48 B2 F8 N3 Ni P3 |
SMILES | [Ni]1([P](c2ccccc2)(CC(C)(CP(c2ccccc2)c2ccccc2)C[P]1(c1ccccc1)c1ccccc1)c1ccccc1)([N]#CC)([N]#CC)[N]#CC.[B](F)(F)(F)[F-].[B](F)(F)(F)[F-] |
Title of publication | Spontaneous Si-C bond cleavage in (Triphos(Si))-nickel complexes. |
Authors of publication | Petuker, Anette; Mebs, Stefan; Schuth, Nils; Gerschel, Philipp; Reback, Matthew L.; Mallick, Bert; van Gastel, Maurice; Haumann, Michael; Apfel, Ulf-Peter |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2017 |
Journal volume | 46 |
Journal issue | 3 |
Pages of publication | 907 - 917 |
a | 20.7166 ± 0.0005 Å |
b | 12.4767 ± 0.0003 Å |
c | 20.5881 ± 0.0003 Å |
α | 90° |
β | 109.315 ± 0.002° |
γ | 90° |
Cell volume | 5022 ± 0.2 Å3 |
Cell temperature | 105.1 ± 0.14 K |
Ambient diffraction temperature | 105.1 ± 0.14 K |
Number of distinct elements | 7 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.0499 |
Residual factor for significantly intense reflections | 0.0463 |
Weighted residual factors for significantly intense reflections | 0.1227 |
Weighted residual factors for all reflections included in the refinement | 0.1272 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.0492 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 1.54184 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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Users of the data should acknowledge the original authors of the
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