Information card for entry 7042269

Structure parameters

• Formula: C28 H46 Bi Cl7 Ga2 N2 O Si2
• Calculated formula: C28 H46 Bi Cl7 Ga2 N2 O Si2
• SMILES: [Bi]1N([Si](O[Si](N1c1c(cccc1C(C)C)C(C)C)(C)C)(C)C)c1c(cccc1C(C)C)C(C)C.[Ga](Cl)(Cl)(Cl)[Cl][Ga](Cl)(Cl)Cl
• Title of publication: Neutral and cationic bismuth compounds supported by bis(amidodimethyl)disiloxane ligands.
• Authors of publication: Schwamm, R. J.; Coles, M. P.; Fitchett, C. M.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2017
• Journal volume: 46
• Journal issue: 12
• Pages of publication: 4066 - 4074
• a: 10.05327 ± 0.00018 Å
• b: 10.2526 ± 0.0003 Å
• c: 39.4446 ± 0.001 Å
• α: 90°
• β: 92.945 ± 0.0019°
• γ: 90°
• Cell volume: 4060.27 ± 0.17 ų
• Cell temperature: 281.98 ± 0.1 K
• Ambient diffraction temperature: 281.98 ± 0.1 K
• Number of distinct elements: 8
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0659
• Residual factor for significantly intense reflections: 0.0602
• Weighted residual factors for significantly intense reflections: 0.1048
• Weighted residual factors for all reflections included in the refinement: 0.1064
• Goodness-of-fit parameter for all reflections included in the refinement: 1.367
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No