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Information card for entry 7043958
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Coordinates | 7043958.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | bis(disilenyl)thiophene |
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Formula | C54 H104 S Si12 |
Calculated formula | C54 H104 S Si12 |
SMILES | [Si]1(=[Si](c2sc([Si](=[Si]3C([Si](C)(C)C)([Si](C)(C)C)CCC3([Si](C)(C)C)[Si](C)(C)C)c3c(cc(cc3C)C)C)cc2)c2c(cc(C)cc2C)C)C([Si](C)(C)C)([Si](C)(C)C)CCC1([Si](C)(C)C)[Si](C)(C)C |
Title of publication | Heteroaryldisilenes: heteroaryl groups serve as electron acceptors for SiSi double bonds in intramolecular charge transfer transitions |
Authors of publication | Kosai, Tomoyuki; Ishida, Shintaro; Iwamoto, Takeaki |
Journal of publication | Dalton Trans. |
Year of publication | 2017 |
a | 11.8362 ± 0.0012 Å |
b | 17.6788 ± 0.0017 Å |
c | 18.7605 ± 0.0018 Å |
α | 84.111 ± 0.001° |
β | 81.87 ± 0.001° |
γ | 89.724 ± 0.001° |
Cell volume | 3865.5 ± 0.7 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 4 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0355 |
Residual factor for significantly intense reflections | 0.0296 |
Weighted residual factors for significantly intense reflections | 0.0817 |
Weighted residual factors for all reflections included in the refinement | 0.0844 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.044 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7043958.html
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Users of the data should acknowledge the original authors of the
structural data.