Information card for entry 7045805

Structure parameters

• Formula: C30 H56 N6 Sn
• Calculated formula: C30 H56 N6 Sn
• Title of publication: Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Deposition
• Authors of publication: Johnson, Andrew Lee; Ahmet, Ibrahim Y.; Hill, Michael S.; Raithby, Paul R.
• Journal of publication: Dalton Transactions
• Year of publication: 2018
• a: 9.5182 ± 0.0002 Å
• b: 13.6548 ± 0.0002 Å
• c: 13.9233 ± 0.0002 Å
• α: 104.635 ± 0.001°
• β: 106.665 ± 0.0009°
• γ: 101.574 ± 0.0009°
• Cell volume: 1602.89 ± 0.05 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0235
• Residual factor for significantly intense reflections: 0.0214
• Weighted residual factors for significantly intense reflections: 0.0534
• Weighted residual factors for all reflections included in the refinement: 0.0548
• Goodness-of-fit parameter for all reflections included in the refinement: 1.059
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No