Information card for entry 7045807

Structure parameters

• Formula: C81 H136 N12 S10.62 Sn2
• Calculated formula: C81 H136 N12 S10.624 Sn2
• Title of publication: Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Deposition
• Authors of publication: Johnson, Andrew Lee; Ahmet, Ibrahim Y.; Hill, Michael S.; Raithby, Paul R.
• Journal of publication: Dalton Transactions
• Year of publication: 2018
• a: 10.4359 ± 0.0007 Å
• b: 40.547 ± 0.003 Å
• c: 10.821 ± 0.0008 Å
• α: 90°
• β: 95.862 ± 0.004°
• γ: 90°
• Cell volume: 4554.9 ± 0.6 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/a 1
• Hall space group symbol: -P 2yab
• Residual factor for all reflections: 0.1559
• Residual factor for significantly intense reflections: 0.0926
• Weighted residual factors for significantly intense reflections: 0.1742
• Weighted residual factors for all reflections included in the refinement: 0.1965
• Goodness-of-fit parameter for all reflections included in the refinement: 1.146
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No