Information card for entry 7045809

Structure parameters

• Formula: C36 H80 N12 Se2 Sn2
• Calculated formula: C36 H80 N12 Se2 Sn2
• Title of publication: Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Deposition
• Authors of publication: Johnson, Andrew Lee; Ahmet, Ibrahim Y.; Hill, Michael S.; Raithby, Paul R.
• Journal of publication: Dalton Transactions
• Year of publication: 2018
• a: 13.9408 ± 0.0001 Å
• b: 23.6098 ± 0.0003 Å
• c: 15.9826 ± 0.0002 Å
• α: 90°
• β: 109.35 ± 0.0006°
• γ: 90°
• Cell volume: 4963.34 ± 0.1 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0292
• Residual factor for significantly intense reflections: 0.0262
• Weighted residual factors for significantly intense reflections: 0.0609
• Weighted residual factors for all reflections included in the refinement: 0.062
• Goodness-of-fit parameter for all reflections included in the refinement: 1.146
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No