Information card for entry 7045814

Structure parameters

• Formula: C31 H58.33 N6 S4 Sn
• Calculated formula: C30.9999 H58.3331 N6 S4 Sn
• Title of publication: Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Deposition
• Authors of publication: Johnson, Andrew Lee; Ahmet, Ibrahim Y.; Hill, Michael S.; Raithby, Paul R.
• Journal of publication: Dalton Transactions
• Year of publication: 2018
• a: 34.018 ± 0.0006 Å
• b: 10.617 ± 0.0002 Å
• c: 43.782 ± 0.0008 Å
• α: 90°
• β: 106.411 ± 0.0007°
• γ: 90°
• Cell volume: 15168.5 ± 0.5 ų
• Cell temperature: 150.15 K
• Ambient diffraction temperature: 150.15 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0686
• Residual factor for significantly intense reflections: 0.0449
• Weighted residual factors for significantly intense reflections: 0.1306
• Weighted residual factors for all reflections included in the refinement: 0.1546
• Goodness-of-fit parameter for all reflections included in the refinement: 0.924
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No