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Information card for entry 7052155
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Coordinates | 7052155.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | 5 |
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Formula | C36 H48 Cl4 Cu2 N8 O2 S2 |
Calculated formula | C36 H48 Cl4 Cu2 N8 O2 S2 |
SMILES | c1(C)[n]2ccn1Cc1ccc(cc1)Cn1c(C)[n](cc1)[Cu]([n]1c(C)n(cc1)Cc1ccc(cc1)Cn1c(C)[n]([Cu]2(Cl)(Cl)[O]=S(C)C)cc1)(Cl)(Cl)[O]=S(C)C |
Title of publication | The solvent-templating effect as the driving factor that influences the formation of crystalline materials based on the stacking of metallocycles |
Authors of publication | Liliana Dobrzańska; Gareth O. Lloyd; Leonard J. Barbour |
Journal of publication | New Journal of Chemistry |
Year of publication | 2007 |
Journal volume | 31 |
Journal issue | 5 |
Pages of publication | 669 |
a | 8.8822 ± 0.0014 Å |
b | 13.05 ± 0.002 Å |
c | 17.792 ± 0.003 Å |
α | 90° |
β | 95.486 ± 0.003° |
γ | 90° |
Cell volume | 2052.9 ± 0.6 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 7 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.0757 |
Residual factor for significantly intense reflections | 0.0516 |
Weighted residual factors for significantly intense reflections | 0.1074 |
Weighted residual factors for all reflections included in the refinement | 0.1161 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.033 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7052155.html
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