Information card for entry 7104459

Structure parameters

• Formula: C48 H62 Si2
• Calculated formula: C48 H62 Si2
• SMILES: C(#Cc1c2cc3c(C)ccc(c3cc2c(C#C[Si](C(C)C)(C(C)C)C(C)C)c2c1cc1c(c2)c(ccc1C)C)C)[Si](C(C)C)(C(C)C)C(C)C
• Title of publication: High performance, acene-based organic thin film transistors.
• Authors of publication: Llorente, Gonzalo Rincon; Dufourg-Madec, Marie-Beatrice; Crouch, David J; Pritchard, Robin G; Ogier, Simon; Yeates, Stephen G
• Journal of publication: Chemical communications (Cambridge, England)
• Year of publication: 2009
• Journal volume: 34
• Journal issue: 21
• Pages of publication: 3059 - 3061
• a: 9.0135 ± 0.0006 Å
• b: 10.2107 ± 0.0005 Å
• c: 11.7743 ± 0.0008 Å
• α: 70.694 ± 0.002°
• β: 84.9 ± 0.002°
• γ: 82.342 ± 0.005°
• Cell volume: 1012.41 ± 0.11 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1849
• Residual factor for significantly intense reflections: 0.118
• Weighted residual factors for significantly intense reflections: 0.2393
• Weighted residual factors for all reflections included in the refinement: 0.2784
• Goodness-of-fit parameter for all reflections included in the refinement: 1.025
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No