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Information card for entry 7108265
Preview
Coordinates | 7108265.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C62 H49 N6 O7.5 Tb2 |
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Calculated formula | C62 H49 N6 O7.5 Tb2 |
SMILES | O.c12c(cccc1)[N]1=Cc3c(cccc3)O[Tb]34561([N]2=Cc1c(cccc1)O4)[N]1=Cc2c(cccc2)[O]5[Tb]245([N](c7c(cccc7)[N]2=Cc2c(cccc2)O5)=Cc2c(cccc2)O4)([O]6c2c(cccc2)C=[N]3c2c1cccc2)[OH]CC |
Title of publication | Electrical-field-induced structural change and charge transfer of lanthanide-salophen complexes assembled on carbon nanotube field effect transistor devices |
Authors of publication | Gurvan Magadur; Fatima Bouanis; Evgeny Norman; Regis Guillot; Jean-Sebastien Lauret; Vincent Huc; Costel-Sorin Cojocaru; Talal Mallah |
Journal of publication | Chem.Commun. |
Year of publication | 2012 |
Journal volume | 48 |
Pages of publication | 9071 |
a | 22.027 ± 0.003 Å |
b | 23.021 ± 0.003 Å |
c | 22.557 ± 0.002 Å |
α | 90° |
β | 113.134 ± 0.003° |
γ | 90° |
Cell volume | 10519 ± 2 Å3 |
Cell temperature | 100 ± 1 K |
Ambient diffraction temperature | 100 ± 1 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.1122 |
Residual factor for significantly intense reflections | 0.069 |
Weighted residual factors for significantly intense reflections | 0.1581 |
Weighted residual factors for all reflections included in the refinement | 0.1832 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.095 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/7108265.html
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Users of the data should acknowledge the original authors of the
structural data.