Information card for entry 7108405

Structure parameters

• Formula: C120 H118 Ag2 Au6 B4 F16 N10 O P6 S2
• Calculated formula: C120 H96 Ag2 Au6 B3.998 F16 N10 O P6 S2
• Title of publication: A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors
• Authors of publication: Li Qu; Jingui Qin
• Journal of publication: Chem.Commun.
• Year of publication: 2012
• Journal volume: 48
• Pages of publication: 9965
• a: 33.623 ± 0.001 Å
• b: 17.0023 ± 0.0005 Å
• c: 23.3618 ± 0.0007 Å
• α: 90°
• β: 105.93 ± 0.003°
• γ: 90°
• Cell volume: 12842.3 ± 0.7 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 10
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0914
• Residual factor for significantly intense reflections: 0.0395
• Weighted residual factors for significantly intense reflections: 0.0852
• Weighted residual factors for all reflections included in the refinement: 0.1181
• Goodness-of-fit parameter for all reflections included in the refinement: 0.843
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No