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Information card for entry 7109174
Preview
Coordinates | 7109174.cif |
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Original paper (by DOI) | HTML |
Formula | C68 H68 N4 O4 Zn |
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Calculated formula | C68 H68 N4 O4 Zn |
SMILES | c12=C(c3ccc4=C(c5ccc6C(=c7ccc8[n]7[Zn](n2c(=C8c2c(OCC)cccc2OCC)cc1)([n]34)n56)C#Cc1ccc(cc1)CCCCCC)c1c(OCC)cccc1OCC)C#Cc1ccc(cc1)CCCCCC |
Title of publication | Dramatic enhancement of carrier mobility via effective secondary structural arrangement resulting from the substituents in a porphyrin transistor |
Authors of publication | Seung Hyun Chae; Soojung Choi; Jicheol Shin; Youngmee Kim; Sung-Jin Kim; Dong Hoon Choi; SukJoong Lee |
Journal of publication | Chem.Commun. |
Year of publication | 2013 |
Journal volume | 49 |
Pages of publication | 3994 |
a | 10.2621 ± 0.0011 Å |
b | 23.923 ± 0.003 Å |
c | 11.125 ± 0.0012 Å |
α | 90° |
β | 90.8 ± 0.01° |
γ | 90° |
Cell volume | 2730.9 ± 0.5 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.1119 |
Residual factor for significantly intense reflections | 0.0522 |
Weighted residual factors for significantly intense reflections | 0.1075 |
Weighted residual factors for all reflections included in the refinement | 0.1201 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.837 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7109174.html
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