Information card for entry 7110475

Structure parameters

• Formula: C33 H52 N4 Si
• Calculated formula: C33 H52 N4 Si
• SMILES: [Si]1(N(c2c(N1CC(C)(C)C)cccc2)CC(C)(C)C)=C1N(c2c(N1CC(C)(C)C)cccc2)CC(C)(C)C
• Title of publication: A crystalline carbene‒silylene adduct 1,2-C6H4[N(R)]2C-Si[N(R)]2C6H4-1,2 (R = CH2But); synthesis, structure and bonding in model compounds†
• Authors of publication: Marco Boesveld, W.; Gehrhus, Barbara; Hitchcock, Peter B.; Lappert, Michael F.; von Ragué Schleyer, Paul
• Journal of publication: Chemical Communications
• Year of publication: 1999
• Journal issue: 8
• Pages of publication: 755
• a: 10.212 ± 0.004 Å
• b: 16.231 ± 0.005 Å
• c: 19.776 ± 0.008 Å
• α: 90°
• β: 101.73 ± 0.03°
• γ: 90°
• Cell volume: 3209 ± 2 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1556
• Residual factor for significantly intense reflections: 0.075
• Weighted residual factors for all reflections: 0.1982
• Weighted residual factors for significantly intense reflections: 0.154
• Goodness-of-fit parameter for all reflections: 1.002
• Goodness-of-fit parameter for significantly intense reflections: 1.072
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No