Information card for entry 7111477

Structure parameters

• Formula: C12 H32 Ge N2 Se3
• Calculated formula: C12 H32 Ge N2 Se3
• Title of publication: Chemical routes to GeS2 and GeSe2 nanowires
• Authors of publication: Nath, Manashi; Choudhury, Amitava; Rao, C. N. R.
• Journal of publication: Chemical Communications
• Year of publication: 2004
• Journal issue: 23
• Pages of publication: 2698 - 2699
• a: 10.8528 ± 0.0008 Å
• b: 18.3953 ± 0.0014 Å
• c: 10.9941 ± 0.0008 Å
• α: 90°
• β: 103.42°
• γ: 90°
• Cell volume: 2134.9 ± 0.3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1124
• Residual factor for significantly intense reflections: 0.0709
• Weighted residual factors for all reflections: 0.1237
• Weighted residual factors for significantly intense reflections: 0.1128
• Goodness-of-fit parameter for all reflections: 1.169
• Goodness-of-fit parameter for significantly intense reflections: 1.283
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No