Information card for entry 7114149

Structure parameters

• Formula: C34 H43 N O4 Si2
• Calculated formula: C34 H43 N O4 Si2
• SMILES: [Si]([Si@](C)(c1ccccc1)C[NH+]1CCCCC1)(C)(c1ccccc1)c1ccccc1.[O-]C(=O)[C@H](O)c1ccccc1.O
• Title of publication: Synthesis of a highly enantiomerically enriched silyllithium compound
• Authors of publication: Strohmann, Carsten; Hörnig, Jan; Auer, Dominik
• Journal of publication: Chemical Communications
• Year of publication: 2002
• Journal issue: 7
• Pages of publication: 766
• a: 9.886 ± 0.002 Å
• b: 12.973 ± 0.003 Å
• c: 13.14 ± 0.003 Å
• α: 90°
• β: 107.83 ± 0.03°
• γ: 90°
• Cell volume: 1604.3 ± 0.7 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for all reflections: 0.0556
• Residual factor for significantly intense reflections: 0.0524
• Weighted residual factors for all reflections: 0.1416
• Weighted residual factors for significantly intense reflections: 0.1386
• Goodness-of-fit parameter for all reflections: 1.064
• Goodness-of-fit parameter for significantly intense reflections: 1.08
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No