Information card for entry 7115746

Structure parameters

• Formula: C35 H56 Bi In N2
• Calculated formula: C35 H56 Bi In N2
• SMILES: [Bi]([In]1([N](=C(C=C(N1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C)CC)(CC)CC
• Title of publication: Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}
• Authors of publication: C. Ganesamoorthy; D. Blaser; C. Wolper; S. Schulz
• Journal of publication: Chem.Commun.
• Year of publication: 2014
• Journal volume: 50
• Pages of publication: 12382
• a: 8.741 ± 0.0004 Å
• b: 21.4064 ± 0.001 Å
• c: 19.0397 ± 0.0009 Å
• α: 90°
• β: 99.26 ± 0.001°
• γ: 90°
• Cell volume: 3516.2 ± 0.3 ų
• Cell temperature: 100 ± 1 K
• Ambient diffraction temperature: 100 ± 1 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0353
• Residual factor for significantly intense reflections: 0.0283
• Weighted residual factors for significantly intense reflections: 0.0603
• Weighted residual factors for all reflections included in the refinement: 0.0631
• Goodness-of-fit parameter for all reflections included in the refinement: 1.103
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No