Information card for entry 7116585

Structure parameters

• Formula: C70 H132 As4 Ge8 K3 N8 O18 V
• Calculated formula: C54 H108 As3.9984 Ge7.9992 K3 N6 O18 V0.9999
• Title of publication: [V@Ge8As4]^3-^ and [Nb@Ge8As6]^3-^: encapsulation of electron-poor transition metal atoms
• Authors of publication: Stefan Mitzinger; Lies Broeckaert; Werner Massa; Florian Weigend; Stefanie Dehnen
• Journal of publication: Chem.Commun.
• Year of publication: 2015
• Journal volume: 51
• Pages of publication: 3866
• a: 11.9985 ± 0.0007 Å
• b: 16.7415 ± 0.0011 Å
• c: 25.3291 ± 0.0018 Å
• α: 80.709 ± 0.006°
• β: 88.755 ± 0.005°
• γ: 69.258 ± 0.005°
• Cell volume: 4692.3 ± 0.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 8
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1582
• Residual factor for significantly intense reflections: 0.0598
• Weighted residual factors for significantly intense reflections: 0.1077
• Weighted residual factors for all reflections included in the refinement: 0.1194
• Goodness-of-fit parameter for all reflections included in the refinement: 0.687
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No