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Information card for entry 7117633
Preview
Coordinates | 7117633.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | bisphenalenethienoacene |
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Formula | C52 H54 S2 Si2 |
Calculated formula | C52 H54 S2 Si2 |
SMILES | s1c2c(c3cccc4ccc(c(c34)c2c2sc3c(c4cccc5c4c(c(cc5)C)c3c12)C#C[Si](C(C)C)(C(C)C)C(C)C)C)C#C[Si](C(C)C)(C(C)C)C(C)C |
Title of publication | Pro-aromatic bisphenaleno-thieno[3,2-b]thiophene versus anti-aromatic bisindeno-thieno[3,2-b]thiophene: different ground-state properties and applications in field-effect transistors |
Authors of publication | Xueliang Shi; Sangsu Lee; Minjung Son; Bin Zheng; Jingjing Chang; Linzhi Jing; Kuo-Wei Huang; Dongho Kim; Chunyan Chi |
Journal of publication | Chem.Commun. |
Year of publication | 2015 |
Journal volume | 51 |
Pages of publication | 13178 |
a | 17.7574 ± 0.0016 Å |
b | 14.7085 ± 0.0014 Å |
c | 17.0416 ± 0.0015 Å |
α | 90° |
β | 90.251 ± 0.005° |
γ | 90° |
Cell volume | 4451 ± 0.7 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.1048 |
Residual factor for significantly intense reflections | 0.077 |
Weighted residual factors for significantly intense reflections | 0.2043 |
Weighted residual factors for all reflections included in the refinement | 0.2471 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.052 |
Diffraction radiation wavelength | 1.54178 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
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