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Information card for entry 7125727
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| Coordinates | 7125727.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | Spiro(TFSI)2 |
|---|---|
| Chemical name | 2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene bis(trifluoromethanesulfonyl)imide |
| Formula | C85 H68 F12 N6 O16 S4 |
| Calculated formula | C85 H68 F12 N6 O16 S4 |
| Title of publication | Single crystal structure and opto-electronic properties of oxidized Spiro-OMeTAD. |
| Authors of publication | Zhang, Wei; Wang, Linqin; Guo, Yu; Zhang, Biaobiao; Leandri, Valentina; Xu, Bo; Li, Zhuofeng; Gardner, James M.; Sun, Licheng; Kloo, Lars |
| Journal of publication | Chemical communications (Cambridge, England) |
| Year of publication | 2020 |
| Journal volume | 56 |
| Journal issue | 10 |
| Pages of publication | 1589 - 1592 |
| a | 20.677 ± 0.004 Å |
| b | 21.726 ± 0.004 Å |
| c | 36.877 ± 0.007 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 16566 ± 5 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 70 |
| Hermann-Mauguin space group symbol | F d d d :2 |
| Hall space group symbol | -F 2uv 2vw |
| Residual factor for all reflections | 0.0736 |
| Residual factor for significantly intense reflections | 0.0697 |
| Weighted residual factors for significantly intense reflections | 0.2277 |
| Weighted residual factors for all reflections included in the refinement | 0.2323 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.915 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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