Information card for entry 7128938

Structure parameters

• Chemical name: (C16H72N2)WS4
• Formula: C32 H72 N2 S4 W
• Calculated formula: C32 H72 N2 S4 W
• SMILES: [W](=S)(=S)([S-])[S-].[N+](CCCC)(CCCC)(CCCC)CCCC.[N+](CCCC)(CCCC)(CCCC)CCCC
• Title of publication: Tungsten disulfide thin films <i>via</i> electrodeposition from a single source precursor.
• Authors of publication: Thomas, Shibin; Greenacre, Victoria K.; Smith, Danielle E.; Noori, Yasir J.; Abdelazim, Nema M.; Hector, Andrew L.; de Groot, C. H. Kees; Levason, William; Bartlett, Philip N.; Reid, Gillian
• Journal of publication: Chemical communications (Cambridge, England)
• Year of publication: 2021
• Journal volume: 57
• Journal issue: 79
• Pages of publication: 10194 - 10197
• a: 35.5582 ± 0.0006 Å
• b: 28.7216 ± 0.0005 Å
• c: 15.5658 ± 0.0004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 15897.2 ± 0.6 ų
• Cell temperature: 100.01 ± 0.1 K
• Ambient diffraction temperature: 100.01 ± 0.1 K
• Number of distinct elements: 5
• Space group number: 43
• Hermann-Mauguin space group symbol: F d d 2
• Hall space group symbol: F 2 -2d
• Residual factor for all reflections: 0.0623
• Residual factor for significantly intense reflections: 0.0572
• Weighted residual factors for significantly intense reflections: 0.1408
• Weighted residual factors for all reflections included in the refinement: 0.1446
• Goodness-of-fit parameter for all reflections included in the refinement: 1.054
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No