Information card for entry 7204633

Structure parameters

• Formula: C24 H47 In N3 S6
• Calculated formula: C24 H47 In N3 S6
• SMILES: C1(=[S][In]23(SC(=[S]2)N(C)CCCCCC)([S]=C(N(C)CCCCCC)S3)S1)N(C)CCCCCC
• Title of publication: The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)
• Authors of publication: Park, Jin-Ho; Afzaal, Mohammad; Kemmler, Michael; O'Brien, Paul; Otway, David J.; Raftery, Jim; Waters, John
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2003
• Journal volume: 13
• Journal issue: 8
• Pages of publication: 1942
• a: 19.66 ± 0.005 Å
• b: 16.984 ± 0.005 Å
• c: 10.086 ± 0.003 Å
• α: 90°
• β: 104.492 ± 0.005°
• γ: 90°
• Cell volume: 3260.6 ± 1.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.108
• Residual factor for significantly intense reflections: 0.0679
• Weighted residual factors for significantly intense reflections: 0.1623
• Weighted residual factors for all reflections included in the refinement: 0.1822
• Goodness-of-fit parameter for all reflections included in the refinement: 1.091
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No