Information card for entry 7204689

Structure parameters

• Formula: C28 H71 Hf N O4 Si4
• Calculated formula: C28 H71 Hf N O4 Si4
• SMILES: C[Si](C)(C(C)(C)C)O[Hf]([NH](CC)CC)(O[Si](C)(C)C(C)(C)C)(O[Si](C)(C)C(C)(C)C)O[Si](C)(C)C(C)(C)C
• Title of publication: Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach
• Authors of publication: Roberts, John L.; Marshall, Paul A.; Jones, Anthony C.; Chalker, Paul R.; Bickley, Jamie F.; Williams, Paul A.; Taylor, Stephen; Smith, Lesley M.; Critchlow, Gary W.; Schumacher, Marcus; Lindner, Johannes
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2004
• Journal volume: 14
• Journal issue: 3
• Pages of publication: 391
• a: 18.4262 ± 0.0011 Å
• b: 20.7941 ± 0.0012 Å
• c: 21.1986 ± 0.0012 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 8122.4 ± 0.8 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0475
• Residual factor for significantly intense reflections: 0.0272
• Weighted residual factors for significantly intense reflections: 0.0586
• Weighted residual factors for all reflections included in the refinement: 0.0644
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No