Information card for entry 7206643
| Formula |
C22 H8 O4 S4 |
| Calculated formula |
C22 H8 O4 S4 |
| SMILES |
C1(SC2=C(C(=O)c3ccccc3C2=O)S1)=C1SC2=C(C(=O)c3ccccc3C2=O)S1 |
| Title of publication |
Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties |
| Authors of publication |
Otón, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Bratina, Gvido; Cornil, Jérôme; Puigdollers, Joaquim; Alcubilla, Ramón; Fontrodona, Xavier; Mas-Torrent, Marta; Veciana, Jaume; Rovira, Concepció |
| Journal of publication |
CrystEngComm |
| Year of publication |
2011 |
| Journal volume |
13 |
| Journal issue |
22 |
| Pages of publication |
6597 |
| a |
3.881 ± 0.004 Å |
| b |
7.532 ± 0.008 Å |
| c |
31.35 ± 0.03 Å |
| α |
90° |
| β |
90.59 ± 0.018° |
| γ |
90° |
| Cell volume |
916.4 ± 1.6 Å3 |
| Cell temperature |
300 ± 2 K |
| Ambient diffraction temperature |
300 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.2976 |
| Residual factor for significantly intense reflections |
0.2174 |
| Weighted residual factors for significantly intense reflections |
0.4178 |
| Weighted residual factors for all reflections included in the refinement |
0.4364 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.876 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7206643.html