Information card for entry 7207717

Structure parameters

• Common name: _C6-DBTDT
• Chemical name: _C6-DBTDT
• Formula: C28 H32 S3
• Calculated formula: C28 H32 S3
• SMILES: s1c2cc(ccc2c2c1c1c(c3c(cc(cc3)CCCCCC)s1)s2)CCCCCC
• Title of publication: High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene
• Authors of publication: Miyata, Yasuo; Yoshikawa, Eiji; Minari, Takeo; Tsukagoshi, Kazuhito; Yamaguchi, Shigehiro
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2012
• Journal volume: 22
• Journal issue: 16
• Pages of publication: 7715
• a: 4.12 ± 0.03 Å
• b: 11.09 ± 0.11 Å
• c: 52.8 ± 0.6 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2412 ± 4 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 3
• Space group number: 57
• Hermann-Mauguin space group symbol: P b c m
• Hall space group symbol: -P 2c 2b
• Residual factor for all reflections: 0.1328
• Residual factor for significantly intense reflections: 0.1186
• Weighted residual factors for significantly intense reflections: 0.3177
• Weighted residual factors for all reflections included in the refinement: 0.3325
• Goodness-of-fit parameter for all reflections included in the refinement: 1.519
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No