Information card for entry 7212124

Structure parameters

• Formula: C34 H34 O2
• Calculated formula: C34 H34 O2
• SMILES: C1([O-])=C(C(=O)[C+]1c1cc(C)c2c1c(C)ccc(c2)C(C)C)c1cc(C)c2c1c(C)ccc(c2)C(C)C
• Title of publication: Ambipolar organic transistors and near-infrared phototransistors based on a solution-processable squarilium dye
• Authors of publication: Wöbkenberg, Paul H.; Labram, John G.; Swiecicki, Jean-Marie; Parkhomenko, Ksenia; Sredojevic, Dusan; Gisselbrecht, Jean-Paul; de Leeuw, Dago M.; Bradley, Donal D. C.; Djukic, Jean-Pierre; Anthopoulos, Thomas D.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2010
• Journal volume: 20
• Journal issue: 18
• Pages of publication: 3673
• a: 9.6702 ± 0.0006 Å
• b: 14.2059 ± 0.001 Å
• c: 11.0365 ± 0.0007 Å
• α: 90°
• β: 123.306 ± 0.004°
• γ: 90°
• Cell volume: 1267.1 ± 0.15 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1014
• Residual factor for significantly intense reflections: 0.056
• Weighted residual factors for significantly intense reflections: 0.1198
• Weighted residual factors for all reflections included in the refinement: 0.1373
• Goodness-of-fit parameter for all reflections included in the refinement: 1.017
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No