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Information card for entry 7212964
Preview
Coordinates | 7212964.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C48 H42 Cu N18 |
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Calculated formula | C48 H42 Cu N18 |
SMILES | C1C[NH]2[Cu]345([NH]6CC[NH]3CC[NH]5CC6)[NH]1CC[NH]4CC2.C1(C=CC(C=C1)=C(C#N)C#N)=C(C#N)C#N.C1(C=CC(C=C1)=C(C#N)C#N)=C(C#N)C#N.C1(C=CC(C=C1)=C(C#N)C#N)=C(C#N)C#N |
Title of publication | Structural, magnetic, electrical and optical characterization of systems built from [M([9]aneN3)2]2+ (M=CuII or NiII) and TCNQ or TCNQF4 |
Authors of publication | Azcondo, M. Teresa; Ballester, Loreto; Golhen, Stephane; Gutierrez, Angel; Ouahab, Lahcene; Yartsev, Slav; Delhaes, Pierre |
Journal of publication | Journal of Materials Chemistry |
Year of publication | 1999 |
Journal volume | 9 |
Journal issue | 6 |
Pages of publication | 1237 |
a | 8.35 ± 0.002 Å |
b | 9.884 ± 0.004 Å |
c | 14.369 ± 0.004 Å |
α | 74.1 ± 0.02° |
β | 89.01 ± 0.02° |
γ | 69.11 ± 0.02° |
Cell volume | 1061.3 ± 0.6 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 4 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0427 |
Residual factor for significantly intense reflections | 0.0311 |
Weighted residual factors for all reflections | 0.0891 |
Weighted residual factors for significantly intense reflections | 0.0829 |
Goodness-of-fit parameter for all reflections | 1.055 |
Goodness-of-fit parameter for significantly intense reflections | 1.058 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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