Information card for entry 7221828

Structure parameters

• Formula: C22 H49 N3 Si3
• Calculated formula: C22 H49 N3 Si3
• SMILES: C1(CCCCC1)/N=C(/N(C1CCCCC1)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Synthesis, Characterization, Thermal Properties of Silicon(IV) Compounds Containing Guanidinato Ligands and Their Potential as CVD Precursors
• Authors of publication: Du, Liyong; Chu, Wenxiang; Miao, Hongyan; Xu, Chongying; Ding, Yuqiang
• Journal of publication: RSC Adv.
• Year of publication: 2015
• a: 9.0667 ± 0.0012 Å
• b: 11.4557 ± 0.0015 Å
• c: 14.1193 ± 0.0019 Å
• α: 100.93 ± 0.003°
• β: 102.475 ± 0.002°
• γ: 91.188 ± 0.002°
• Cell volume: 1403 ± 0.3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0777
• Residual factor for significantly intense reflections: 0.0574
• Weighted residual factors for significantly intense reflections: 0.1809
• Weighted residual factors for all reflections included in the refinement: 0.2258
• Goodness-of-fit parameter for all reflections included in the refinement: 1.089
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No