Information card for entry 7227460

Structure parameters

• Formula: Eu Ga2 S4
• Calculated formula: Eu Ga2 S4
• Title of publication: Band gap tuning from an indirect EuGa2S4 to a direct EuZnGeS4 semiconductor: syntheses, crystal and electronic structures, and optical properties
• Authors of publication: Chi, Yang; Guo, Sheng-Ping; Xue, Huai-Guo
• Journal of publication: RSC Adv.
• Year of publication: 2017
• Journal volume: 7
• Journal issue: 9
• Pages of publication: 5039
• a: 12.209 ± 0.011 Å
• b: 20.445 ± 0.018 Å
• c: 20.68 ± 0.019 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5162 ± 8 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296.15 K
• Number of distinct elements: 3
• Space group number: 70
• Hermann-Mauguin space group symbol: F d d d
• Hall space group symbol: -F 2uv 2vw
• Residual factor for all reflections: 0.0421
• Residual factor for significantly intense reflections: 0.0342
• Weighted residual factors for significantly intense reflections: 0.0841
• Weighted residual factors for all reflections included in the refinement: 0.0894
• Goodness-of-fit parameter for all reflections included in the refinement: 1.145
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No