Information card for entry 7227463

Structure parameters

• Formula: Eu Ge S4 Zn
• Calculated formula: Eu Ge S4 Zn
• Title of publication: Band gap tuning from an indirect EuGa2S4 to a direct EuZnGeS4 semiconductor: syntheses, crystal and electronic structures, and optical properties
• Authors of publication: Chi, Yang; Guo, Sheng-Ping; Xue, Huai-Guo
• Journal of publication: RSC Adv.
• Year of publication: 2017
• Journal volume: 7
• Journal issue: 9
• Pages of publication: 5039
• a: 20.398 ± 0.006 Å
• b: 20.682 ± 0.006 Å
• c: 12.234 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5161 ± 3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296.15 K
• Number of distinct elements: 4
• Space group number: 70
• Hermann-Mauguin space group symbol: F d d d
• Hall space group symbol: -F 2uv 2vw
• Residual factor for all reflections: 0.0553
• Residual factor for significantly intense reflections: 0.0483
• Weighted residual factors for significantly intense reflections: 0.1245
• Weighted residual factors for all reflections included in the refinement: 0.1279
• Goodness-of-fit parameter for all reflections included in the refinement: 1.129
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No