Information card for entry 7229436

Structure parameters

• Formula: P Si
• Calculated formula: P Si
• Title of publication: Controllable Seeded Flux Growth and Optic-electric Properties of Bulk o-SiP Crystals
• Authors of publication: Li, Chunlong; Wang, Shanpeng; Zhang, Xixia; Jia, Ning; Yu, Tongtong; Zhu, Min; Liu, Duo; Tao, Xutang
• Journal of publication: CrystEngComm
• Year of publication: 2017
• a: 3.5255 ± 0.0006 Å
• b: 20.563 ± 0.004 Å
• c: 13.666 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 990.7 ± 0.3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 2
• Space group number: 36
• Hermann-Mauguin space group symbol: C m c 21
• Hall space group symbol: C 2c -2
• Residual factor for all reflections: 0.0187
• Residual factor for significantly intense reflections: 0.0185
• Weighted residual factors for significantly intense reflections: 0.0494
• Weighted residual factors for all reflections included in the refinement: 0.0496
• Goodness-of-fit parameter for all reflections included in the refinement: 1.109
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No