Information card for entry 7229631

Structure parameters

• Formula: C19 H12 N4
• Calculated formula: C19 H12 N4
• Title of publication: Solid-state organization of n-type carbazole-based semiconductors for organic thin-film transistors.
• Authors of publication: Reig, Marta; Puigdollers, Joaquim; Velasco, Dolores
• Journal of publication: Physical chemistry chemical physics : PCCP
• Year of publication: 2018
• Journal volume: 20
• Journal issue: 2
• Pages of publication: 1142 - 1149
• a: 7.0914 ± 0.0002 Å
• b: 12.8955 ± 0.0004 Å
• c: 16.1234 ± 0.0006 Å
• α: 90°
• β: 99.027 ± 0.001°
• γ: 90°
• Cell volume: 1456.18 ± 0.08 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0696
• Residual factor for significantly intense reflections: 0.0626
• Weighted residual factors for significantly intense reflections: 0.1362
• Weighted residual factors for all reflections included in the refinement: 0.142
• Goodness-of-fit parameter for all reflections included in the refinement: 1.127
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No