Information card for entry 7230848

Structure parameters

• Formula: C42 H51 N3
• Calculated formula: C42 H51 N3
• Title of publication: Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors.
• Authors of publication: Reig, Marta; Bagdziunas, Gintautas; Ramanavicius, Arunas; Puigdollers, Joaquim; Velasco, Dolores
• Journal of publication: Physical chemistry chemical physics : PCCP
• Year of publication: 2018
• Journal volume: 20
• Journal issue: 26
• Pages of publication: 17889 - 17898
• a: 8.411 ± 0.003 Å
• b: 15.202 ± 0.005 Å
• c: 26.348 ± 0.009 Å
• α: 86.9 ± 0.016°
• β: 89.438 ± 0.015°
• γ: 84.427 ± 0.017°
• Cell volume: 3348 ± 2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.2746
• Residual factor for significantly intense reflections: 0.0795
• Weighted residual factors for significantly intense reflections: 0.1683
• Weighted residual factors for all reflections included in the refinement: 0.2293
• Goodness-of-fit parameter for all reflections included in the refinement: 0.866
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No