Information card for entry 7231950

Structure parameters

• Common name: Type I silicon-gallium clathrate
• Chemical name: sodium gallium silicon
• Formula: Ga4.94 Na8 Si41.06
• Calculated formula: Ga4.9416 Na8 Si41.0584
• Title of publication: Na‒Ga‒Si type-I clathrate single crystals grown via Na evaporation using Na‒Ga and Na‒Ga‒Sn fluxes
• Authors of publication: Urushiyama, Hironao; Morito, Haruhiko; Yamane, Hisanori; Terauchi, Masami
• Journal of publication: RSC Advances
• Year of publication: 2018
• Journal volume: 8
• Journal issue: 71
• Pages of publication: 40505
• a: 10.302 ± 0.0002 Å
• b: 10.302 ± 0.0002 Å
• c: 10.302 ± 0.0002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1093.36 ± 0.04 ų
• Cell temperature: 300 ± 2 K
• Ambient diffraction temperature: 300 ± 2 K
• Number of distinct elements: 3
• Space group number: 223
• Hermann-Mauguin space group symbol: P m -3 n
• Hall space group symbol: -P 4n 2 3
• Residual factor for all reflections: 0.0102
• Residual factor for significantly intense reflections: 0.01
• Weighted residual factors for significantly intense reflections: 0.0269
• Weighted residual factors for all reflections included in the refinement: 0.0269
• Goodness-of-fit parameter for all reflections included in the refinement: 1.296
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No