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Information card for entry 7232768
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Coordinates | 7232768.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | Type I silicon-gallium clathrate |
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Chemical name | sodium strontium gallium silicon |
Formula | Ga9.1 Na3.92 Si36.9 Sr4.08 |
Calculated formula | Ga9.0976 Na3.922 Si36.9024 Sr4.078 |
Title of publication | Single crystal growth and structure analysis of type-I (Na/Sr)‒(Ga/Si) quaternary clathrates |
Authors of publication | Urushiyama, Hironao; Morito, Haruhiko; Yamane, Hisanori |
Journal of publication | RSC Advances |
Year of publication | 2019 |
Journal volume | 9 |
Journal issue | 26 |
Pages of publication | 14586 |
a | 10.3804 ± 0.0004 Å |
b | 10.3804 ± 0.0004 Å |
c | 10.3804 ± 0.0004 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 1118.52 ± 0.07 Å3 |
Cell temperature | 302 ± 2 K |
Ambient diffraction temperature | 302 ± 2 K |
Number of distinct elements | 4 |
Space group number | 223 |
Hermann-Mauguin space group symbol | P m -3 n |
Hall space group symbol | -P 4n 2 3 |
Residual factor for all reflections | 0.0147 |
Residual factor for significantly intense reflections | 0.0134 |
Weighted residual factors for significantly intense reflections | 0.0311 |
Weighted residual factors for all reflections included in the refinement | 0.0314 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.146 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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