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Information card for entry 7232890
Preview
Coordinates | 7232890.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C24 H15 O4 S12 |
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Calculated formula | C24 H15 O4 S12 |
Title of publication | Pressure-induced hydrogen localization coupled to a semiconductor‒insulator transition in a hydrogen-bonded molecular conductor |
Authors of publication | Ueda, Akira; Kishimoto, Kouki; Isono, Takayuki; Yamada, Shota; Kamo, Hiromichi; Kobayashi, Kensuke; Kumai, Reiji; Murakami, Youichi; Gouchi, Jun; Uwatoko, Yoshiya; Nishio, Yutaka; Mori, Hatsumi |
Journal of publication | RSC Advances |
Year of publication | 2019 |
Journal volume | 9 |
Journal issue | 32 |
Pages of publication | 18353 |
a | 29.348 ± 0.003 Å |
b | 8.4654 ± 0.0003 Å |
c | 11.2565 ± 0.0004 Å |
α | 90° |
β | 100.911 ± 0.006° |
γ | 90° |
Cell volume | 2746 ± 0.3 Å3 |
Cell temperature | 270 K |
Ambient diffraction temperature | 270 K |
Number of distinct elements | 4 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0615 |
Residual factor for significantly intense reflections | 0.0546 |
Weighted residual factors for significantly intense reflections | 0.1419 |
Weighted residual factors for all reflections included in the refinement | 0.1461 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.974 |
Diffraction radiation wavelength | 1 Å |
Diffraction radiation type | synchrotron |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
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The link is: https://www.crystallography.net/7232890.html
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