Information card for entry 7233894

Structure parameters

• Formula: C20 H12 S3
• Calculated formula: C20 H12 S3
• SMILES: c1(c2ccccc2)cc2c(c3c(cc(c4ccccc4)s3)s2)s1
• Title of publication: Asymmetric fused thiophenes for field-effect transistors: crystal structure-film microstructure-transistor performance correlations
• Authors of publication: Ming-Chou Chen; Sureshraju Vegiraju; Chi-Ming Huang; Peng-Yi Huang; Kumaresan Prabakaran; Shueh Lin Yau; Wei-Chih Chen; Wei-Tao Peng; Ito Chao; Choongik Kim; Yu-Tai Tao
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2014
• Journal volume: 2
• Pages of publication: 8892 - 8902
• a: 7.468 ± 0.004 Å
• b: 5.916 ± 0.003 Å
• c: 34.719 ± 0.015 Å
• α: 90°
• β: 94.01 ± 0.04°
• γ: 90°
• Cell volume: 1530.2 ± 1.3 ų
• Cell temperature: 200 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.2708
• Residual factor for significantly intense reflections: 0.1599
• Weighted residual factors for significantly intense reflections: 0.3548
• Weighted residual factors for all reflections included in the refinement: 0.4062
• Goodness-of-fit parameter for all reflections included in the refinement: 1.09
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No