Information card for entry 7233896

Structure parameters

• Formula: C20 H7 F5 S3
• Calculated formula: C20 H7 F5 S3
• SMILES: s1c(c2ccccc2)cc2sc3c(sc(c3)c3c(F)c(F)c(F)c(F)c3F)c12
• Title of publication: Asymmetric fused thiophenes for field-effect transistors: crystal structure-film microstructure-transistor performance correlations
• Authors of publication: Ming-Chou Chen; Sureshraju Vegiraju; Chi-Ming Huang; Peng-Yi Huang; Kumaresan Prabakaran; Shueh Lin Yau; Wei-Chih Chen; Wei-Tao Peng; Ito Chao; Choongik Kim; Yu-Tai Tao
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2014
• Journal volume: 2
• Pages of publication: 8892 - 8902
• a: 5.8734 ± 0.0002 Å
• b: 36.1226 ± 0.0012 Å
• c: 7.4967 ± 0.0002 Å
• α: 90°
• β: 91.667 ± 0.002°
• γ: 90°
• Cell volume: 1589.85 ± 0.09 ų
• Cell temperature: 100 ± 0.1 K
• Ambient diffraction temperature: 100 ± 0.1 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0706
• Residual factor for significantly intense reflections: 0.0648
• Weighted residual factors for significantly intense reflections: 0.17
• Weighted residual factors for all reflections included in the refinement: 0.1789
• Goodness-of-fit parameter for all reflections included in the refinement: 1.251
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No