Information card for entry 7233903

Structure parameters

• Formula: C28 H18 N2 O2
• Calculated formula: C28 H18 N2 O2
• Title of publication: High performance ambipolar organic field-effect transistors based on indigo derivatives
• Authors of publication: Oratai Pitayatanakul; Toshiki Higashino; Tomofumi Kadoya; Masaki Tanaka; Hirotaka Kojima; Minoru Ashizawa; Tadashi Kawamoto; Hidetoshi Matsumoto; Ken Ishikawa; Takehiko Mori
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2014
• Journal volume: 2
• Pages of publication: 9311 - 9317
• a: 21.2805 ± 0.0006 Å
• b: 7.0108 ± 0.0002 Å
• c: 6.5404 ± 0.0002 Å
• α: 90°
• β: 92.739 ± 0.002°
• γ: 90°
• Cell volume: 974.67 ± 0.05 ų
• Cell temperature: 296 K
• Ambient diffraction temperature: 296 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.0692
• Weighted residual factors for all reflections included in the refinement: 0.2044
• Goodness-of-fit parameter for all reflections included in the refinement: 0.956
• Diffraction radiation wavelength: 1.54187 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No