Information card for entry 7234102

Structure parameters

• Chemical name: C8BTBT-F2TCNQ
• Formula: C42 H42 F2 N4 S2
• Calculated formula: C42 H40 F2 N4 S2
• Title of publication: N-type field-effect transistors based on layered crystalline donor-acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors
• Authors of publication: Jun'ya Tsutsumi; Satoshi Matsuoka; Satoru Inoue; Hiromi Minemawari; Toshikazu Yamada; Tatsuo Hasegawa
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2015
• Journal volume: 3
• Pages of publication: 1976 - 1981
• a: 7.1554 ± 0.0007 Å
• b: 7.8669 ± 0.0011 Å
• c: 17.71 ± 0.003 Å
• α: 86.35 ± 0.011°
• β: 81.334 ± 0.01°
• γ: 72.909 ± 0.009°
• Cell volume: 941.8 ± 0.2 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for significantly intense reflections: 0.0637
• Weighted residual factors for all reflections included in the refinement: 0.1574
• Goodness-of-fit parameter for all reflections included in the refinement: 0.994
• Diffraction radiation wavelength: 0.71075 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No