Information card for entry 7234259

Structure parameters

• Chemical name: Gallium Nitride - Thick Layer
• Formula: Ga N
• Calculated formula: Ga N
• Title of publication: Composition and bandgap control of AlxGa1-xN films synthesized by plasma-assisted pulsed laser deposition
• Authors of publication: Hua Cai; Peipei Liang; Rene Hubner; Shengqiang Zhou; Yanli Li; Jian Sun; Ning Xu; Jiada Wu
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2015
• Journal volume: 3
• Pages of publication: 5307 - 5315
• a: 3.1972 ± 0.0012 Å
• b: 3.1972 ± 0.0012 Å
• c: 5.207 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 46.1 ± 0.04 ų
• Number of distinct elements: 2
• Space group number: 186
• Hermann-Mauguin space group symbol: P 63 m c
• Hall space group symbol: P 6c -2c
• Residual factor for all reflections: 0.0088
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No