Information card for entry 7234318

Structure parameters

• Formula: C4 H16 N11 O13 Y
• Calculated formula: C4 H16 N11 O13 Y
• Title of publication: Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
• Authors of publication: Koslowski, Nico; Hoffmann, Rudolf C.; Trouillet, Vanessa; Bruns, Michael; Foro, Sabine; Schneider, Jörg J.
• Journal of publication: RSC Advances
• Year of publication: 2019
• Journal volume: 9
• Journal issue: 54
• Pages of publication: 31386
• a: 7.5428 ± 0.0007 Å
• b: 11.256 ± 0.001 Å
• c: 11.976 ± 0.001 Å
• α: 112.238 ± 0.008°
• β: 96.414 ± 0.007°
• γ: 94.215 ± 0.007°
• Cell volume: 927.83 ± 0.15 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0335
• Residual factor for significantly intense reflections: 0.0271
• Weighted residual factors for significantly intense reflections: 0.0681
• Weighted residual factors for all reflections included in the refinement: 0.0695
• Goodness-of-fit parameter for all reflections included in the refinement: 1.076
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No