Information card for entry 7234593

Structure parameters

• Formula: C32 H54 F10 O6 P2 Ru
• Calculated formula: C32 H54 F10 O6 P2 Ru
• SMILES: C(#[O])[Ru](C#[O])(OC(=O)C(C(F)(F)F)(F)F)(OC(=O)C(C(F)(F)F)(F)F)([P](CCCC)(CCCC)CCCC)[P](CCCC)(CCCC)CCCC
• Title of publication: Chemical vapor deposition of ruthenium-based layers by a single-source approach
• Authors of publication: Janine Jeschke; Stefan Mockel; Marcus Korb; Tobias Ruffer; Khaybar Assim; Marcel Melzer; Gordon Herwig; Colin Georgi; Stefan E. Schulz; Heinrich Lang
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2016
• Journal volume: 4
• Pages of publication: 2319 - 2328
• a: 23.178 ± 0.0005 Å
• b: 9.2295 ± 0.0003 Å
• c: 38.6832 ± 0.0008 Å
• α: 90°
• β: 102.737 ± 0.002°
• γ: 90°
• Cell volume: 8071.5 ± 0.4 ų
• Cell temperature: 109.85 ± 0.1 K
• Ambient diffraction temperature: 109.85 ± 0.1 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: I 1 2/a 1
• Hall space group symbol: -I 2ya
• Residual factor for all reflections: 0.0361
• Residual factor for significantly intense reflections: 0.0307
• Weighted residual factors for significantly intense reflections: 0.0781
• Weighted residual factors for all reflections included in the refinement: 0.0811
• Goodness-of-fit parameter for all reflections included in the refinement: 1.041
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No