Information card for entry 7234894

Structure parameters

• Formula: C56 H120 As8 In8
• Calculated formula: C56 H120 As8 In8
• Title of publication: A single-source precursor approach to solution processed indium arsenide thin films
• Authors of publication: Peter Marchand; Sanjayan Sathasivam; Benjamin A. D. Williamson; David Pugh; Salem M. Bawaked; Sulaiman N. Basahel; Abdullah Y. Obaid; David O. Scanlon; Ivan P. Parkin; Claire J. Carmalt
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2016
• Journal volume: 4
• Pages of publication: 6761 - 6768
• a: 14.4602 ± 0.001 Å
• b: 12.4339 ± 0.0009 Å
• c: 23.7507 ± 0.0017 Å
• α: 90°
• β: 107.564 ± 0.001°
• γ: 90°
• Cell volume: 4071.2 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0482
• Residual factor for significantly intense reflections: 0.0324
• Weighted residual factors for significantly intense reflections: 0.0678
• Weighted residual factors for all reflections included in the refinement: 0.0749
• Goodness-of-fit parameter for all reflections included in the refinement: 1.05
• Diffraction radiation wavelength: 0.71075 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No